Loading patent…
AssigneeJapan Science and Technology Agency
InventorsHideomi Koinuma, Yuji Matsumoto, Ryota Takahashi
Estimating the term…
A Bi4Ti3O12 nanoplate, an array of such Bi4Ti3O12 nanoplate and their making methods as well as their applications are provided. Using a vapor phase growth method, a flux layer of VOx is deposited on a SrTiO3 (001) faced substrate and then Bi4Ti3O12 is deposited on the flux layer. A Bi4Ti3O12 single crystal nanoplate is formed standing up on the flux layer in the form of a rectangular solid whose independent three sides are crystallographically oriented in directions coincident with particular crystallographic directions of the single crystal substrate, respectively. The nanoplates as a nanostructure grown by the bottom-up method are substantially fixed in shape and are densely arrayed not in contact with one another, and are applicable to a low-cost ferroelectric memory and the like.
A layered Bi compound nanoplate consisting of an Aurivillius layered Bi compound single crystal having a composition expressed by formula:
A method of making a layered Bi compound nanoplate array, characterized in that it comprises the steps, in a vapor phase growth method in an oxygen atmosphere of a selected pressure, of depositing a flux layer of VOx (where 1≦x≦2.5) on a selected single crystal substrate at a selected temperature and depositing a material whose composition is expressed by formula:
A method of making a layered Bi compound nanoplate array, characterized in that it comprises the steps, in a vapor phase growth method in an oxygen atmosphere of a selected pressure, of depositing a flux layer of VOx (where 1≦x≦2.5) on a selected single crystal substrate at a selected temperature and depositing Bi4Ti3O12 on said flux layer at a selected temperature.
Dependencies are inferred from the claim text.