Semiconductor device
AssigneeRenesas Technology Corp.
InventorsToshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
Life of this patent
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Abstract
Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.
Claims21
An RF power module including a module board (MCB) and a semiconductor chip (1C) mounted over the module board, the semiconductor chip including:
- a first amplifier circuit (2A) comprised of a plurality of amplifying stages (2A1-2A3) electrically coupled in series,
- the first amplifier circuit having a first input terminal (4a) and a first output terminal (5a);
- a second amplifier circuit (2B) comprised of a plurality of amplifying stages (2B1-2B3) electrically coupled in series,
- the second amplifier circuit having a second input terminal (4b) and a second output terminal (5b);
- and
- a control circuit (3) controlling the first and second amplifier circuits;
- wherein the control circuit is located between the first amplifier circuit and the second amplifier circuit.
An RF power module according to claim l,
- wherein the semiconductor chip has a quadrilateral shape in plan view, with a pair of sides,
- wherein the first amplifier circuit is disposed along one of the pair of sides, and
- wherein the second amplifier circuit is disposed along another one of the pair of sides.
An RF power module including a module board (MCB) and a semiconductor chip (1C) mounted over the module board, the semiconductor chip including:
- a first amplifier circuit (2A) comprised of a plurality of amplifying stages (2A1-2A3) electrically coupled in series,
- the first amplifier circuit having a first input terminal (4a) and a first output terminal (5a);
- a second amplifier circuit (2B) comprised of a plurality of amplifying stages (2B1-2B3) electrically coupled in series,
- the second amplifier circuit having a second input terminal (4b) and a second output terminal (5b);
- and
- a control circuit (3) controlling the first and second amplifier circuits,
- wherein the semiconductor chip is comprised of a semiconductor substrate of silicon,
- wherein each of the plurality of amplifying stages of the first and second amplifier circuits is comprised of a MOSFET,
- wherein the first amplifier circuit and the amplifier circuit amplify a first signal and a second signal, respectively,
- wherein a frequency of the first signal is higher than that of the second signal,
- wherein the control circuit includes a bias voltage generating circuit (3A2) which supplies a gate bias voltage to each of the plurality of amplifying stages of the first and second amplifier circuits,
- wherein the semiconductor chip has a quadrilateral shape in plan view, with a pair of sides,
- wherein the first amplifier circuit is disposed along one of the pair of sides,
- wherein the second amplifier circuit is disposed along another one of the pair of sides, and
- wherein the control circuit is located between the first amplifier circuit and the second amplifier circuit,
Dependencies are inferred from the claim text.