Method and Circuit for Implementing Efuse Resistance Screening

A circuit for implementing eFuse resistance screening with a sense amplifier comprising:

• a plurality of reference resistors;
• a respective select transistor connected to each of said plurality of reference resistors;
• a first pull-up resistor coupled to said plurality of reference resistors for forming a reference resistor voltage divider;
• a second pull-up resistor connected to an eFuse for forming an eFuse voltage divider;
• a first reference resistor select signal being applied to a first select transistor connected to a first reference resistor for the sense amplifier sensing the eFuse using said first reference resistor;
• a second reference resistor select signal being applied to a second select transistor connected to a second reference resistor for the sense amplifier sensing the eFuse using said second reference resistor, responsive to the sense amplifier sensing the eFuse as being blown with said first reference resistor, said second reference resistor having a higher resistance than said first reference resistor;
• and
• the sense amplifier identifying the eFuse as being poorly blown responsive to the eFuse being sensed as unblown with said second reference resistor.

A design structure embodied in a machine readable medium used in a design process, the design structure comprising:

• a circuit for implementing eFuse resistance screening with a sense amplifier;
• a plurality of reference resistors;
• a respective select transistor connected to each of said plurality of reference resistors;
• a first pull-up resistor coupled to said plurality of reference resistors for forming a reference resistor voltage divider;
• a second pull-up resistor connected to an eFuse for forming an eFuse voltage divider;
• a reference resistor select signal being applied to a first select transistor connected to a first reference resistor for the sense amplifier sensing the eFuse using said first reference resistor;
• a second reference resistor select signal being applied to a second select transistor connected to a second reference resistor for the sense amplifier sensing the eFuse using said second reference resistor, responsive to the sense amplifier sensing the eFuse as being blown with said first reference resistor, said second reference resistor having a higher resistance than said first reference resistor;
• and
• the sense amplifier identifying the eFuse as being poorly blown responsive to the eFuse being sensed as unblown with said second reference resistor.