Semiconductor Interconnect Structure with Stacked Vias Separated by Signal Line and Method Therefor

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive layer over the substrate;
• forming a first passivation layer over the first conductive layer;
• forming a first via in the first passivation layer to expose the first conductive layer;
• forming a second conductive layer over the first passivation layer and within the first via to electrically connect the second conductive layer to the first conductive layer;
• forming a second passivation layer over the second conductive layer;
• and
• forming a second via in the second passivation layer to expose the second conductive layer.

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a conductive layer over the substrate;
• forming a passivation layer over the second conductive layer;
• and
• forming a via in the second passivation layer to expose the conductive layer, wherein the conductive layer within the via has a flat surface which is wider than the second via.

A semiconductor device, comprising:

• a substrate;
• a first conductive layer formed over the substrate;
• a first passivation layer formed over the first conductive layer;
• a first via formed in the first passivation layer to expose the first conductive layer;
• a second conductive layer formed over the first passivation layer and within the first via to electrically connect the second conductive layer to the first conductive layer;
• a second passivation layer formed over the second conductive layer;
• and
• a second via formed in the second passivation layer to expose the second conductive layer.