Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsYukihiro Kumagai, Hiroyuki Ohta, Naotaka Tanaka, Masahiko Fujisawa, Akihiko Ohsaki
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AssigneeRenesas Electronics Corporation
InventorsYukihiro Kumagai, Hiroyuki Ohta, Naotaka Tanaka, Masahiko Fujisawa, Akihiko Ohsaki
Estimating the term…
In a semiconductor device having a Low-k film as an interlayer insulator, peeling of the interlayer insulator in a thermal cycle test is prevented, thereby providing a highly reliable semiconductor device. In a semiconductor device having a structure in which interlayer insulators in which buried wires each having a main electric conductive layer made of copper are formed and cap insulators of the buried wires are stacked, the cap insulator having a relatively high Young's modulus and contacting by its upper surface with the interlayer insulator made of a Low-k film having a relatively low Young's modulus is formed so as not to be provided in an edge portion of the semiconductor device.
A semiconductor device comprising a semiconductor chip of a planer rectangular shape, wherein
A semiconductor device comprising a semiconductor chip of a planer rectangular shape, wherein
A semiconductor device comprising a semiconductor chip of a planer rectangular shape, wherein
Dependencies are inferred from the claim text.