Semiconductor structure and method for forming the same
AssigneeVanguard International Semiconductor Corporation
InventorsHsin-Chi Sun, Wen-Chung Chen, Chih-Cherng Liao, Sung-Min Wei
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Abstract
A semiconductor structure and method for forming the same are provided. The semiconductor structure comprises a semiconductor substrate, a plurality of top metallizations on the semiconductor substrate, a high density plasma layer filling gaps between the top metallizations and having a substantially planar upper surface overlying the top metallizations, and a passivation layer overlying the high density plasma layer. A metal bump can be formed overlying the top metallizations through the passivation layer and HDPCVD layer for subsequent bonding.
Claims19
A semiconductor structure, comprising:
- a semiconductor substrate;
- a plurality of top metallizations on the semiconductor substrate;
- a high density plasma layer filling gaps between the top metallizations and having a substantially planar upper surface overlying the top metallizations;
- and
- a passivation layer overlying the high density plasma layer.
A method for forming a semiconductor structure, comprising:
- providing a semiconductor substrate;
- forming a plurality of top metallizations on the semiconductor substrate;
- forming a high density plasma layer filling gaps between the top metallizations and having a protruding surface;
- planarizing the high density plasma layer to provide a substantially planar upper surface;
- and
- forming a passivation layer overlying the planar high density plasma layer.
Dependencies are inferred from the claim text.