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US 2009/0212435 A1Published application
Power semiconductor device including a double metal contact
AssigneeInternational Rectifier Corporation
InventorsRobert Montgomery, Hugo Burke, Philip Parsonage, Susan Johns, David Paul Jones
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Abstract
A power semiconductor device that includes a stack of a thin metal layer and a thick metal layer over the active region thereof, and a method for the fabrication thereof.
Claims14
A power semiconductor device comprising:
- a semiconductor body including an active region on one surface thereof, said active region including source regions and gate electrodes;
- a first metal layer disposed on said one surface and coupled to said source regions;
- a metallic gate bus disposed on said one surface lateral to and spaced from said first metal layer;
- a buffer body disposed over said gate bus and in a space between said gate bus and said first metal layer;
- and
- a second metal layer disposed over said first metal layer and extending over said buffer body.
3 more elements
A method of fabricating a power semiconductor device, comprising:
- depositing a first metal layer over an active region formed in a semiconductor body, said active region including source regions and gate electrodes;
- dry etching said first metal layer to obtain a first source metal layer and a metallic gate bus that is laterally spaced from said first source metal layer;
- forming a buffer body over said gate bus;
- and
- depositing a second metal layer over said first metal layer and over said buffer body.
2 more elements
Dependencies are inferred from the claim text.