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AssigneeInternational Business Machines Corporation
InventorsFelix P. Anderson, Steven P. Barkyoumb, Edward C. Cooney, III, Thomas L. McDevitt, William J. Murphy, David C. Strippe
Estimating the term…
Processes for improving adhesion of films to semiconductor wafers and a semiconductor structure are provided. By implementing the processes of the invention, it is possible to significantly suppress defect creation, e.g., decrease particle generation, during wafer fabrication processes. More specifically, the processes described significantly reduce flaking of a TaN film from edges or extreme edges (bevel) of the wafer by effectively increasing the adhesion properties of the TaN film on the wafer. The method increasing a mol percent of nitride with respect to a total tantalum plus nitride to 25% or greater during a barrier layer fabrication process.
A structure comprising:
A method of fabricating a semiconductor structure comprising increasing a mol percent of nitride with respect to a total tantalum plus nitride to 25% or greater during a barrier layer fabrication process.
A method of fabricating a semiconductor structure comprising adjusting a parameter in a chamber to increase a mol percent of nitride to 25% or greater with respect to a total tantalum plus nitride during a Pressure Vapor Deposition (PVD) process.
A method of depositing a barrier layer in a trough or via, comprising introducing nitrogen into a deposition chamber such that a resultant mol percentage of nitride with respect to tantalum plus nitride is about 25% to 90%.
Dependencies are inferred from the claim text.