Re-distribution conductive line structure and the method of forming the same
AssigneeAdvanced Chip Engineering Technology Inc.
InventorsWen-Kun Yang, Ya-Tzu Wu, Cheng-Chieh Tai
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Abstract
A conductive line structure of a semiconductor device, the structure comprising a substrate having bonding pad; a first dielectric layer formed over the substrate; a solder pad formed over the first dielectric layer; a buffer scheme formed over the first dielectric layer and between the bonding pad and the solder pad; a conductive line formed over the buffer scheme for coupling between the bonding pad and the solder pad; a second dielectric layer formed over the conductive line to expose the solder pad; and a solder ball formed over the solder pad.
Claims31
A conductive line structure of semiconductor device, comprising:
- a substrate having a bonding pad;
- a first dielectric layer formed over said substrate;
- a solder pad formed over said first dielectric layer;
- a buffer scheme formed over said first dielectric layer and between said bonding pad and said solder pad;
- a conductive line formed over said buffer scheme for coupling between said bonding pad and said solder pad;
- a second dielectric layer formed over said conductive line to expose said solder pad;
- and
- a solder ball formed over said solder pad.
A method of forming re-distribution layer (RDL) with buffer scheme, comprising:
- forming a passivation over a substrate to expose a bonding pad;
- forming a first dielectric layer over said passivation;
- forming a buffer scheme subsequently over said first dielectric layer;
- forming a conductive line on said buffer scheme and coupled to a solder pad, wherein said buffer scheme is formed on the area between said bonding pad and a solder pad;
- forming a second dielectric layer over said conductive line to expose said solder pad;
- forming a under ball metal (UBM) on said solder pad;
- and
- forming a ball on said UBM.
Dependencies are inferred from the claim text.