Solder Structures Including Barrier Layers with Nickel and/or Copper

An electronic device comprising:

• an electronic substrate;
• an under bump seed metallurgy layer on the electronic substrate;
• a barrier layer on the under bump seed metallurgy layer so that the under bump seed metallurgy layer is between the barrier layer and the electronic substrate, wherein the barrier layer comprises nickel and/or copper, and wherein the barrier layer defines a lip portion that extends laterally beyond portions of the under bump seed metallurgy layer;
• and
• a solder layer on the barrier layer so that the barrier layer is between the solder layer and the under bump seed metallurgy layer.

An electronic device comprising:

• an electronic substrate;
• an under bump seed metallurgy layer on the electronic substrate;
• a barrier layer on the under bump seed metallurgy layer so that the under bump seed metallurgy layer is between the barrier layer and the electronic substrate, wherein the barrier layer comprises nickel layer having a thickness in the range of about 1 μm (micrometer) to about 5 μm (micrometer), and wherein portions of the under bump seed metallurgy layer are undercut relative to portions of the barrier layer;
• and
• a lead-free solder layer on the barrier layer so that the barrier layer is between the lead-free solder layer and the under bump seed metallurgy layer.