Integrated circuit device and method for fabricating same

An integrated circuit device comprising:

• a semiconductor substrate comprising a first surface and a second surface and having a thickness of less than 100 μm;
• a wiring layer on the first surface of the semiconductor substrate;
• a conductive via in the semiconductor substrate being electrically coupled to the wiring layer and exposed at the second surface of the semiconductor substrate;
• a circuit chip arranged on the wiring layer;
• and
• an embedding layer on the wiring layer and on the circuit chip, the embedding layer encapsulating the circuit chip.

A multi-chip module comprising:

• an interposer substrate consisting of silicon, the interposer substrate comprising a first surface and a second surface and having a thickness of less than 100 μm;
• a multilayer wiring layer on the first surface of the interposer substrate comprising a plurality of contact areas;
• a plurality of conductive vias in the interposer substrate being electrically coupled to the multilayer wiring layer and exposed at the second surface of the interposer substrate, each conductive via comprising a via hole having an aspect ratio of depth to width smaller than 1;
• at least two circuit chips arranged on the wiring layer horizontally next to each other and being electrically coupled to each other by means of the wiring layer, the circuit chips comprising contact bumps protruding from a surface of the circuit chips and being connected to the contact areas of the multilayer wiring layer;
• and
• an embedding layer on the multilayer wiring layer and on the circuit chips, the embedding layer encapsulating the circuit chips.