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US 2009/0212385 A1Published application
Semiconductor device including vanadium oxide sensor element with restricted current density
AssigneeNEC Electronics Corporation
InventorsHIROAKI OHKUBO, YASUTAKA NAKASHIBA
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Abstract
In a semiconductor device including a semiconductor substrate and at least one sensor element made of vanadium oxide formed over the semiconductor substrate, the sensor element is designed so that a density of a current flowing through the sensor element is between 0 and 100 μA/μm2.
Claims6
A semiconductor device comprising:
- a semiconductor substrate;
- and
- at least one sensor element made of vanadium oxide formed over said semiconductor substrate, said sensor element is designed so that a density of a current flowing through said sensor element is between 0 to 100 μA/μm2.
Dependencies are inferred from the claim text.