Method for manufacturing solid-state imaging device
AssigneeKabushiki Kaisha Toshiba
InventorToshiya HISASAKA
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Abstract
A method for manufacturing a solid-state imaging device is provided. The method includes the steps of forming a base layer 16 on a semiconductor substrate 11 with a plurality of photodiodes 12 arranged therein, forming a blue filter 17-1, a green filter 17-2 or a red filter 17-3 on the base layer 16 at a position above each of the photodiodes 12, applying a black resist layer 18a entirely so as to cover these filters 17-1, 17-2 and 17-3 and to fill in spaces between the filters 17-1, 17-2 and 17-3; and forming a black filter 18 by etching the black resist layer 18a until the upper parts of the filters 17-1, 17-2 and 17-3 are exposed.
Claims17
A method for manufacturing a solid-state imaging device comprising steps of:
- forming a base layer on a semiconductor substrate with a plurality of photodiodes arranged therein;
- forming filters on the base layer at positions above the respective photodiodes, each of the filters transmitting light in wavelength band of any one of a plurality of colors;
- applying a black resist layer to an entire surface of the base layer with the filters formed thereon in such a manner as to cover the filters;
- and
- flattening the surface of the base layer with the black resist layer applied thereon by etching until surfaces of the filters are exposed.
A method for manufacturing a solid-state imaging device comprising the steps of:
- forming a multi-layer wiring layer on a semiconductor substrate with a plurality of photodiodes arranged therein;
- forming on the multi-layer wiring layer a base layer with recess portions formed above the respective photodiodes;
- forming filters in the respective recess portions of the base layer, each of the filters transmitting light in wavelength band of any one of a plurality of colors;
- applying a black resist layer to an entire surface of the base layer with the filters formed thereon in such a manner as to cover the filters;
- and
- flattening the surface of the base layer with the black resist layer applied thereon by etching until surfaces of the filters are exposed.
An imaging device comprising:
- a base layer formed on a semiconductor substrate with a plurality of photodiodes arranged therein;
- filters formed on the base layer at positions above the respective photodiodes, each of the filters transmitting light in wavelength band of any one of a plurality of colors;
- a black resist layer applied to spaces between any two of the filters so that a surface formed by the black resist layer and the filters may be substantially flat.
Dependencies are inferred from the claim text.