Semiconductor device
AssigneeFuji Electric Device Technology Co., Ltd.
InventorsTaichi KARINO, Akio KITAMURA
Life of this patent
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Abstract
A semiconductor device facilitates securing a high breakdown voltage and reducing a chip area thereof includes a low-potential gate driver circuit disposed on a semiconductor substrate, a high-breakdown-voltage junction edge-termination structure disposed in a peripheral portion of a high-potential gate driver circuit, disposed on the semiconductor substrate, for separating the low-potential gate driver circuit and the high-potential gate driver circuit from each other. A trench is disposed in the edge termination structure and between an n+-type source layer and an n+-type drain layer in a level shift circuit in the high-potential gate driver circuit, and an oxide film fills the trench to form a dielectric region in trench.
Claims6
A semiconductor device that controls one or more power devices, the one or more power devices comprising a first main terminal connected to a high potential side of a high-voltage power supply and a second main terminal connected to a load, the semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- a low-potential-side low-breakdown-voltage circuit, thereto a current is fed from a first low-voltage power supply, a reference thereof is set on a low potential side of the high-voltage power supply, the low-potential-side low-breakdown-voltage circuit being on the semiconductor substrate;
- a high-potential-side low-breakdown-voltage circuit, thereto a current is fed from a second low-voltage power supply, a reference thereof is set on the first or second main terminal of the one or more power devices, the high-potential-side low-breakdown-voltage circuit being on the semiconductor substrate, the high-potential-side low-breakdown-voltage circuit being spaced apart from the low-potential-side low-breakdown-voltage circuit;
- a high-breakdown-voltage junction edge-termination structure, thereto a high voltage is applied for separating the high-potential-side low-breakdown-voltage circuit and the low-potential-side low-breakdown-voltage circuit electrically from each other, the high-breakdown-voltage junction edge-termination structure being on the semiconductor substrate, the high-breakdown-voltage junction edge-termination structure surrounding the high-potential-side low-breakdown-voltage circuit;
- a trench in the high-breakdown-voltage junction edge-termination structure, the trench surrounding the high-potential-side low-breakdown-voltage circuit;
- a first well layer of a second conductivity type in a surface portion of the semiconductor substrate along an inner side of the trench;
- and
- a second well layer of the second conductivity type in the surface portion of the semiconductor substrate along an outer side of the trench, the second well layer being in contact with the first well layer.
Dependencies are inferred from the claim text.