Semiconductor device fabrication method
AssigneeKabushiki Kaisha Toshiba
InventorTakuya KOBAYASHI
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Abstract
According to an aspect of the present invention, there is provided a method for fabricating a semiconductor device, the method including: forming a first region and a second region in a substrate; forming the high-permittivity insulating film on the substrate in the first region and in the second region; forming a nitride film on the high-permittivity insulating film in the second region; forming a cap film on the high-permittivity insulating film in the first region and on the nitride film in the second region; forming a metal film on the cap film; and performing a heating process.
Claims18
A method for fabricating a semiconductor device, the method comprising;
- forming a first region and a second region in a substrate;
- forming the high-permittivity insulating film on the substrate in the first region and in the second region;
- forming a nitride film on the high-permittivity insulating film in the second region;
- forming a cap film on the high-permittivity insulating film in the first region and on the nitride film in the second region;
- forming a metal film on the cap film;
- and
- performing a heating process.
A method for fabricating a semiconductor device, the method comprising;
- forming a first region and a second region in a substrate;
- forming the high-permittivity insulating film on the substrate in the first region and in the second region;
- substituting the high-permittivity insulating film into a nitrided high-permittivity insulating film in the second region so as to have a nitride concentration higher than that of the high-permittivity insulating film by performing a nitriding process;
- forming a cap layer on the high-permittivity insulating film in the first region and on the nitrided high-permittivity insulating film in the second region;
- forming a metal film on the cap film;
- and
- performing a heating process.
A semiconductor device comprising:
- a semiconductor substrate that includes a first region and a second region;
- an NMOS transistor including:
- a first high permittivity insulating film that is formed on the semiconductor substrate in the first region;
- and
- a first metal gate electrode that is formed on the first high permittivity insulating film;
- and
- a PMOS transistor including:
- a second high permittivity insulating film that is formed on the semiconductor substrate in the second region;
- a nitride film that is formed on the second high permittivity insulating film:
- a cap layer that is formed on the nitride film;
- and
- a second metal gate electrode that is formed on the cap layer.
Dependencies are inferred from the claim text.