Semiconductor device and method of fabricating the same
AssigneeUnited Microelectronics Corp.
InventorChin-sheng Yang
Life of this patent
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Abstract
A semiconductor device including transistors and strain layers is provided. Each transistor includes a source region and a drain region on a substrate and a gate structure on a channel region between the source region and the drain region. Lengths of the channel regions of these transistors are the same, but at least one source or drain region has a width along a channel length direction and the width is different from widths of other source or drain regions. The strain layers include first and second strain layers embedded separately at two sides of each gate structure in the substrate. A first width of each first strain layer along the channel length direction is the same, and a second width of each second strain layer along the channel length direction is the same.
Claims21
A semiconductor device, comprising:
- a plurality of transistors, each of the transistors comprising a source region and a drain region disposed on a substrate, and a gate structure disposed on a channel region between the source region and the drain region, wherein the channel regions of the transistors have identical lengths, however, at least one source or drain region has a width along a channel length direction of the channel region different from widths of other source or drain regions along the channel length direction;
- and
- a plurality of strain layers, comprising a plurality of first strain layers and a plurality of second strain layers embedded at two sides of each of the gate structures in the substrate respectively, wherein each of the first strain layers has an identical first width along the channel length direction, and each of the second strain layers has an identical second width along the channel length direction.
A semiconductor device, comprising:
- a first source or drain region and a second source or drain region, respectively disposed in a substrate, a channel region disposed between the first source or drain region and the second source or drain region, a channel length direction of the channel region being a first direction;
- a gate structure, disposed on the channel region;
- and
- a first and a second strain layers, embedded at two sides of the gate substrate in the substrate, wherein projection areas projected on a surface of the substrate by the second strain layer and the second source or drain region partially overlap with each other, and the projection area of the second strain layer is inside that of the second source or drain region.
Dependencies are inferred from the claim text.