Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• forming a first conductivity type well region on a semiconductor substrate;
• forming a plurality of trench regions at a depth smaller than a depth of the first conductivity type well region;
• forming a gate insulating film;
• forming a gate electrode film;
• removing, by anisotropic etching, the gate insulating film and the gate electrode film formed on a bottom portion of each of the plurality of trench regions and a part of the gate insulating film and the gate electrode film formed on a surface of the semiconductor substrate between two of the plurality of trench regions;
• forming an interlayer insulating film;
• removing, by etching, a part of the interlayer insulating film formed on the gate electrode film, a part of the interlayer insulating film formed on the bottom portion of each of the plurality of trench regions, and a part of the interlayer insulating film formed on the surface of the semiconductor substrate between two of the plurality of trench regions;
• forming a metal film;
• and
• etching a part of the metal film.