Semiconductor device
AssigneeSeiko Epson Corporation
InventorAtsushi YAMADA
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Abstract
A semiconductor device includes: a double-diffused metal oxide semiconductor (DMOS) transistor having a gate electrode and a drain electrode region; and a protection element protecting the gate electrode with respect to overvoltage and coupled to the DMOS transistor on a structure of one semiconductor substrate. The DMOS transistor and the protection element are included in an element integrated structure. In the device, the protection element is formed on a diffusion region, which is separately formed with respect to a diffusion region for the DMOS transistor, in the drain electrode region of the DMOS transistor.
Claims7
A semiconductor device, comprising:
- a double-diffused metal oxide semiconductor (DMOS) transistor having a gate electrode and a drain electrode region;
- and
- a protection element protecting the gate electrode with respect to overvoltage and coupled to the DMOS transistor on a structure of one semiconductor substrate,
- the DMOS transistor and the protection element being included in an element integrated structure, wherein
- the protection element is formed on a diffusion region, the diffusion region being separately formed with respect to a diffusion region for the DMOS transistor, in a drain electrode region of the DMOS transistor.
Dependencies are inferred from the claim text.