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US 2009/0212355 A1Published application
Metal-Oxide-Semiconductor Transistor Device and Method for Making the Same
OwnerHsiu-Wen Hsuinventor
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Abstract
A metal-oxide-semiconductor transistor device includes a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, an oxide layer formed on the epitaxial layer, a gate structure formed on the oxide layer, and a shallow junction well formed on the two lateral sides of the gate structure including a source region and a heavy doping region. The gate structure includes a conductive layer having a gap on top of the sidewall of the conductive layer and a spacer formed on the gap.
Claims19
A metal-oxide-semiconductor (MOS) transistor device comprising:
- a semiconductor substrate;
- an epitaxial layer formed on the semiconductor substrate;
- an oxide layer formed on the epitaxial layer;
- a gate structure formed on the oxide layer comprising:
- a conductive layer having a gap on the top of the sidewall of the conductive layer;
- and
- a spacer formed on the gap;
- and
- a shallow junction well region formed on the two lateral sides of the gate structure comprising a source region and a heavy body region.
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A method for fabricating a metal-oxide-semiconductor (MOS) transistor device comprising:
- providing a semiconductor substrate;
- forming an epitaxial layer on the semiconductor substrate;
- forming an oxide layer on the epitaxial layer;
- forming a conductive layer on the oxide layer;
- forming a first opening on the conductive layer;
- performing a first ion implantation process on the first opening for forming a shallow junction well region;
- depositing an oxide layer and performing an etching back process for forming a spacer on the sidewall of the first opening;
- performing an etching process with the spacer as a mask for forming a gate structure;
- forming a source region and a heavy body region in the shallow junction well region on the two lateral sides of the gate structure;
- and
- performing a depositing process and an etching process for forming a dielectric layer and a metal layer for forming the MOS transistor device.
8 more elements
Dependencies are inferred from the claim text.