Nonvolatile semiconductor storage device and method of manufacturing the same

A nonvolatile semiconductor storage device having a plurality of memory strings in which a plurality of electrically rewritable memory cells are connected in series, the memory string comprising:

• a columnar semiconductor layer extending in a direction perpendicular to a substrate;
• a conductive layer formed so as to sandwich a charge storing layer in cooperation with the columnar semiconductor layer;
• and
• a metal layer formed so as to be in contact with the top face of the conductive layer.

A method of manufacturing a nonvolatile semiconductor storage device having a plurality of memory strings in which a plurality of electrically rewritable memory cells are connected in series, comprising:

• sequentially stacking a first interlayer insulating layer, a first conductive layer, and a first metal layer;
• forming a first hole so as to penetrate the first interlayer insulating layer, the first conductive layer, and the first metal layer;
• and
• forming a first columnar semiconductor layer via an insulating layer and a charge storing layer in the first hole.