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US 2009/0212346 A1Published application
Semiconductor memory element
AssigneeKabushiki Kaisha Toshiba
InventorsTsunehiro INO, Naoki Yasuda, Koichi Muraoka, Jun Fujiki, Shoko Kikuchi, Keiko Ariyoshi
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Abstract
A semiconductor memory element includes: a tunnel insulating film formed on a semiconductor substrate; a HfON charge storage film with Bevan clusters formed on the tunnel insulating film; a blocking film formed on the HfON charge storage film; and a gate electrode formed on the blocking film.
Claims20
A semiconductor memory element, comprising:
- a tunnel insulating film formed on a semiconductor substrate;
- a HfON charge storage film with Bevan clusters formed on said tunnel insulating film;
- a blocking film formed on said HfON charge storage film;
- and
- a gate electrode formed on said blocking film.
2 more elements
A HfON charge storage film for a semiconductor memory element comprising Bevan clusters.
Dependencies are inferred from the claim text.