Semitubular metal-oxide-semiconductor field effect transistor

A semiconductor structure comprising:

• a substrate including an insulator layer;
• a strained epitaxial semiconductor structure including a horizontal layer separated from said insulator layer, a first vertical layer vertically abutting said insulating layer, a second vertical layer abutting said insulating layer and not abutting said first vertical layer;
• an inner gate electrode located between the first and second vertical layers and between the horizontal layer and the insulating layer;
• an outer gate electrode located over the strained epitaxial semiconductor structure;
• a body region located in said epitaxial semiconductor structure and having a doping of a first conductivity type;
• a source region having a doping of a second conductivity type and located at a first end of said epitaxial semiconductor structure, wherein said second conductivity type is the opposite of said first conductivity type;
• and
• a drain region having a doping of said second conductivity type and located at second end of said epitaxial semiconductor structure and separated from said source region.

A method of forming a semiconductor structure comprising:

• forming an semiconductor structure having a doping of a first conductivity type on a substrate, wherein said epitaxial semiconductor structure includes a horizontal layer separated from said insulator layer, a first vertical layer vertically abutting said insulating layer, a second vertical layer abutting said insulating layer and not abutting said first vertical layer;
• forming an inner gate electrode inside said epitaxial semiconductor structure;
• forming an outer gate electrode outside said epitaxial semiconductor structure;
• and
• forming a source region and a drain region having a doping of a second conductivity type and at a first end and at a second end of said epitaxial semiconductor structure, respectively, wherein said second conductivity type is the opposite of said first conductivity type.

A floating-body dynamic random access memory device comprising:

• an insulator layer located on a substrate;
• an epitaxial semiconductor structure including a horizontal layer separated from said insulator layer, a first vertical layer vertically abutting said insulating layer, a second vertical layer abutting said insulating layer and not abutting said first vertical layer;
• an inner gate electrode insulated from said epitaxial semiconductor structure and located between said first and second vertical layers and between said horizontal layer and said insulating layer;
• an outer gate electrode insulated from said epitaxial semiconductor structure and located over said epitaxial semiconductor structure.
• a source region located at a first end of said epitaxial semiconductor structure;
• a drain region located at a second end of said epitaxial semiconductor structure and separated from said source region;
• and
• a charge storage node in a center portion of said epitaxial semiconductor structure between said source region and said second region, wherein said storage node is partially depleted to store electrical charges.