Semiconductor component with schottky zones in a drift zone

An integrated circuit comprising:

• a semiconductor body;
• a drift zone of a first conduction type, said drift zone being arranged in the semiconductor body;
• a plurality of Schottky metal zones arranged at a distance from one another in a current flow direction of the component in the drift zone;
• and
• a component junction between the drift zone and a doped component zone of a second conduction type, complementary to the first conduction type, or between the drift zone and a further Schottky metal zone, contact-connected by a connection contact.

A method for producing a semiconductor component comprising a drift zone and at least one Schottky metal zone arranged in the drift zone, wherein the production of the drift zone and of the at least one Schottky metal zone comprises:

• providing a semiconductor layer of a first conduction type;
• producing the at least one Schottky metal zone at a first surface of the semiconductor layer;
• and
• applying a further semiconductor layer to the first surface and the at least one Schottky metal zone.