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US 2009/0212324 A1Published application
Heterojunction field effect transistor
AssigneeOki Electric Industry Co., Ltd.
InventorsIsao TAMAI, Fumihiko Toda, Shinichi Hoshi
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Abstract
An aspect of the invention provides a heterojunction field effect transistor that comprises: a base; a first GaN channel layer formed on the base; an AlN electron supply layer formed on the first GaN layer, and a second GaN cap layer formed on the AlN layer.
Claims23
A heterojunction field effect transistor comprising:
- a base;
- a first GaN channel layer formed on the base;
- an AlN electron supply layer formed on the first GaN layer, and
- a second GaN cap layer formed on the AlN layer.
1 more element
A heterojunction field effect transistor comprising:
- a base;
- a channel layer formed of a first martial, formed on the base;
- an electron supply layer formed of a second martial, formed on the channel layer, and
- a cap layer formed of a first martial, formed on the AlN layer, wherein the cap layer covers the entire top surface of the electron supply layer.
1 more element
Dependencies are inferred from the claim text.