Vertical Semiconductor Device

A vertical semiconductor device comprising:

• a semiconductor body;
• a first contact on a first side of the semiconductor body;
• a second contact on a second side of the semiconductor body opposite the first side;
• wherein a plurality of regions are formed in the semiconductor body, the plurality of regions including, in a direction from the first contact to the second contact,
• a first semiconductor region of a first conductivity type;
• a second semiconductor region of a second conductivity type;
• and
• a third semiconductor region of the first conductivity type,
• wherein the third semiconductor region is connected to the second contact in an electrically conductive manner;
• wherein in the second semiconductor region a semiconductor zone of the second conductivity type is arranged, wherein the doping density in the semiconductor zone is increased relative to a basic doping density of the second semiconductor region, wherein the semiconductor zone separates a first part of the second semiconductor region of the basic doping density arranged closer to the first semiconductor region from a second part of the second semiconductor region of the basic doping density arranged closer to the third semiconductor region;
• and
• wherein a maximum value of the doping density in the semiconductor zone is in a range of greater than 1016 cm−3 and a thickness of the semiconductor zone along the direction from the first contact to the second contact is in a range of smaller than 3 μm.