Gallium nitride-based compound semiconductor light emitting device
AssigneeShowa Denko K.K.
InventorsNoritaka Muraki, Munetaka Watanabe
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Abstract
An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having excellent light extraction efficiency and a high emission output in which a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length. The present light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer formed on the substrate, wherein a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length, and a side surface of the gallium nitride-based compound semiconductor layer is not vertical to a principal surface of the substrate.
Claims15
A light emitting device comprising a substrate and a gallium nitride-based compound semiconductor layer formed on the substrate, wherein a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length, and a side surface of the gallium nitride-based compound semiconductor layer is not vertical to a principal surface of the substrate.
A method for producing a light emitting device comprising a substrate and a gallium nitride-based compound semiconductor layer formed on the substrate, wherein a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length, the method comprising the steps of covering a surface of the gallium nitride-based compound semiconductor layer with a mask having a predetermined pattern;
- removing the gallium nitride-based compound semiconductor layer at a site to be split into devices so as to reach the substrate;
- subjecting to a wet etching treatment after removal;
- and splitting into each device.
Dependencies are inferred from the claim text.