Nitride-based semiconductor light-emitting device and manufacturing method thereof
AssigneeSharp Kabushiki Kaisha
InventorsMayuko Fudeta, Toshio Hata
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Abstract
A nitride-based semiconductor light-emitting device and a manufacturing method thereof are provided. The nitride-based light-emitting device includes a first conductivity type nitride-based semiconductor layer, a light-emitting layer and a second conductivity type nitride-based semiconductor layer, that are successively layered above a translucent base. A first conductivity type electrode layer is electrically connected to the first conductivity type nitride-based semiconductor layer, and a second conductivity type electrode layer is electrically connected to the second conductivity type nitride-based semiconductor layer.
Claims5
A nitride-based semiconductor light-emitting device comprising:
- A first conductivity type nitride-based semiconductor layer;
- a light-emitting layer;
- and a second conductivity type nitride-based semiconductor layer, that are successively layered above a translucent base;
- wherein a thick-film layer is embedded in the translucent base.
Dependencies are inferred from the claim text.