Semiconductor light emitting device
AssigneeStanley Electric Co., Ltd.
InventorMitsunori Harada
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Abstract
A semiconductor light emitting device can vary color temperatures of its emission light and have a simple and small configuration. The semiconductor light emitting device can include a substrate, electrode wiring formed on the substrate, a plurality of semiconductor light emitting elements mounted on the electrode wiring, and a wavelength conversion layer surrounding the semiconductor light emitting elements. The semiconductor light emitting elements constitute a first semiconductor light emitting element group and a second semiconductor light emitting element group. The wavelength conversion layer has a thinner portion corresponding to the first group and a thicker portion corresponding to the second group and can be differentiated by a step provided on the substrate.
Claims19
A semiconductor light emitting device comprising:
- a substrate having electrode wiring;
- a plurality of semiconductor light emitting elements electrically connected to the electrode wiring of the substrate and each configured to emit light along a respective central light emitting axis of a respective one of the semiconductor light emitting elements, the semiconductor light emitting elements being grouped into at least a first group and a second group;
- and
- a wavelength conversion layer configured to wavelength-convert at least a portion of the light emitted from the plurality of semiconductor light emitting elements, the wavelength conversion layer formed as an integral body and having a first thickness along the light emitting axis of respective semiconductor light emitting elements of the first group and a second thickness along the light emitting axis of respective semiconductor light emitting elements of the second group, the first thickness being different from the second thickness.
A semiconductor light emitting device comprising:
- a substrate;
- electrode wiring located adjacent the substrate;
- a plurality of semiconductor light emitting elements electrically connected to the electrode wiring and each configured to emit light along a respective light emitting axis;
- and
- a wavelength conversion layer configured to wavelength-convert at least a portion of the light emitted from the plurality of semiconductor light emitting elements, the wavelength conversion layer having a first thickness as measured along a light emitting axis of a first of the semiconductor light emitting elements, and the wavelength conversion layer having a second thickness as measured along a light emitting axis of a second of the semiconductor light emitting elements, the first thickness being different from the second thickness.
Dependencies are inferred from the claim text.