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US 2009/0212301 A1Published application
Double Guard Ring Edge Termination for Silicon Carbide Devices and Methods of Fabricating Silicon Carbide Devices Incorporating Same
AssigneeCree, Inc.
InventorsQingchun Zhang, Charlotte Jones, Anant K. Agarwal
Life of this patent
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Abstract
Edge termination structures for semiconductor devices are provided including a plurality of spaced apart concentric floating guard rings in a semiconductor layer that at least partially surround a semiconductor junction. The spaced apart concentric floating guard rings have a highly doped portion and a lightly doped portion. Related methods of fabricating devices are also provided herein.
Claims32
An edge termination structure for a semiconductor device, comprising:
- a plurality of spaced apart concentric floating guard rings in a semiconductor layer that at least partially surrounds a semiconductor junction, the spaced apart concentric floating guard rings having a highly doped portion and a lightly doped portion.
A method of fabricating an edge termination structure for a semiconductor device, comprising:
- forming a plurality of spaced apart concentric floating guard rings in a semiconductor layer that at least partially surrounds a semiconductor junction, the spaced apart concentric floating guard rings having a highly doped portion and a lightly doped portion.
Dependencies are inferred from the claim text.