Layer-selective laser ablation patterning

An organic thin film field effect transistor (FET) comprising a substrate bearing a lower conductive layer and an upper conductive layer, and with a layer of solution process able semiconducting material and a layer of organic dielectric material between said lower and upper conductive layers, wherein said upper conductive layer is patterned by laser ablating said upper conductive layer using a pulsed laser to remove regions of said upper conductive layer, wherein said laser ablating uses a single pulse of said laser to substantially completely remove a said region of said upper conductive layer, and wherein said FET has a ratio of off resistance to on resistance of greater than 104.

A diode comprising a substrate bearing a lower conductive layer and an upper conductive layer, and with a layer of solution process able semiconducting material between said lower and upper conductive layers, wherein said upper conductive layer is patterned by laser ablating said upper conductive layer using a pulsed laser to remove regions of said upper conductive layer, wherein said laser ablating uses a single pulse of said laser to substantially completely remove a said region of said upper conductive layer.

A method of fabricating an organic electronic device, said organic electronic device having a structure including an upper conductive layer and a solution process able semiconducting layer immediately beneath said upper conductive layer, the method comprising patterning said upper conductive layer of said substrate by:

• laser ablating said upper conductive layer using a pulsed laser to remove regions of upper conductive layer from said semiconducting layer for said patterning:
• and
• wherein said laser ablating uses a single pulse of said laser to substantially completely remove a said region of said upper conductive layer to expose said semiconducting layer beneath.

A method of fabricating an organic electronic device on a flexible substrate, said organic electronic device having a structure including an upper conductive layer and an underlying layer immediately beneath said upper conducting layer and with at least one solution process able semiconducting layer, the method comprising patterning said upper conductive layer of said structure by:

• laser ablating said upper conductive layer using a pulsed laser to remove regions of upper conductive layer from said underlying layer for said patterning;
• and
• wherein said laser ablating uses a single pulse of said laser to substantially completely remove a said region of said upper conductive layer to expose said underlying layer beneath.

A method of fabricating an organic electronic device on a substrate, said organic electronic device having a structure including an upper conductive layer and an underlying layer immediately beneath said upper conducting layer and with at least one solution process able semiconducting layer, the method comprising patterning said upper conductive layer of said structure by laser ablation, and wherein said laser ablating comprises repeatedly removing portions of said layer of material at substantially the same spatial position to expose said underlying layer using repeated laser pulses, each said pulse having a duration of less than 1 ns.