Transparent Thin Film Transistor and Image Display Unit
AssigneeToppan Printing Co., Ltd.
InventorNoriaki IKEDA
Life of this patent
Estimating the term…
Abstract
An embodiment of the present invention is an transparent thin film transistor which has an substantially transparent substrate, a gate line made of a thin film of a substantially transparent conductive material, a substantially transparent gate insulating film, a substantially transparent semiconductor active layer, a source line made of a thin film of a metal material and a drain electrode made of a thin film of a substantially transparent conductive material. In addition, the source line and the drain electrode are formed apart from each other and sandwich the substantially transparent semiconductor active layer. Moreover, at least any one of the thin film of the gate line and the thin film of the source line is stacked with a thin film of a metal material.
Claims15
A transparent thin film transistor comprising:
- a substantially transparent substrate;
- a gate line including a thin film of a substantially transparent conductive material;
- a substantially transparent gate insulating layer;
- a substantially transparent semiconductor active layer;
- and
- a source line including a thin film of a substantially transparent conductive material, and a drain electrode including a thin film of a substantially transparent conductive material, said source line and said drain electrode being formed apart from each other and sandwiching said substantially transparent semiconductor active layer,
- wherein at least any one of said gate line and said source line is stacked on a respective thin film of a metal material.
Dependencies are inferred from the claim text.