Thin film transistor and method for fabricating same
AssigneeAu Optronics Corporation
InventorsFeng-Yuan Gan, Han-Tu Lin
Life of this patent
Estimating the term…
Abstract
A method for forming a thin film transistor on a substrate is disclosed. A gate electrode and a gate insulation layer are disposed on a surface of the substrate. A deposition process is performed by utilizing hydrogen diluted silane to form a silicon-contained thin film on the gate insulation layer first. A hydrogen plasma etching process is thereafter performed. The deposition process and the etching process are repeated for at least one time to form an interface layer. Finally, an amorphous silicon layer, n+ doped Si layers, a source electrode, and a drain electrode are formed on the interface layer.
Claims12
A thin film transistor structure, comprising:
- a substrate;
- a gate electrode disposed on the substrate;
- a gate insulation layer disposed over the gate electrode;
- an interface layer, disposed on part of the gate insulation layer, having a plurality of stacked microcrystalline silicon layers;
- an amorphous silicon layer disposed on the interface layer;
- and
- a source electrode and a drain electrode disposed on the amorphous silicon layer.
A thin film transistor structure, comprising:
- a substrate;
- a gate electrode disposed on the substrate;
- a gate insulation layer disposed over the gate electrode;
- an interface layer, disposed on part of the gate insulation layer, having a microcrystalline silicon layer;
- an amorphous silicon layer disposed on the interface layer;
- and
- a source electrode and a drain electrode disposed on the amorphous silicon layer.
Dependencies are inferred from the claim text.