Thin film transistor and method for forming the same
AssigneeIgnis Innovation Inc.
InventorsArokia Nathan, Andrei Sazonov, Mohammed Reza Esmaeili Rad
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Abstract
A thin film transistor (TFT) and the method of forming the same is provided. The method of forming the TFT on a surface of a substrate, includes the steps of: forming a gate electrode; deposing a gate dielectric on the gate electrode; forming a nanocrystalline silicon (nc-Si) layer and an amorphous silicon (a-Si:H) layer above the gate dielectric, so that the thickness of the nc-Si layer is less than 30 nm thereby reducing off-current; and forming a source/drain electrode. The TFT includes: a gate electrode on a substrate, a gate dielectric on the gate electrode; a nc-Si layer having a thickness less than 30 nm, thereby reducing off-current; an a-Si:H layer; and a source/drain electrode.
Claims22
A method of forming a thin film transistor on a surface of a substrate, comprising the steps of:
- forming a gate electrode;
- deposing a gate dielectric on the gate electrode;
- forming a nanocrystalline silicon (nc-Si) layer and an amorphous silicon (a-Si:H) layer above the gate dielectric, so that the thickness of the nc-Si layer is less than 30 nm thereby reducing off-current;
- and
- forming a source/drain electrode.
A thin film transistor comprising:
- a gate electrode on a substrate,
- a gate dielectric on the gate electrode;
- a nc-Si layer having a thickness less than 30 nm, thereby reducing off-current;
- an a-Si:H layer;
- and
- a source/drain electrode.
Dependencies are inferred from the claim text.