Semiconductor device and method of manufacturing thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKazuo NISHI, Toru TAKAYAMA, Yuugo GOTO
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKazuo NISHI, Toru TAKAYAMA, Yuugo GOTO
Estimating the term…
The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.
An electronic device comprising:
An electronic device comprising:
Dependencies are inferred from the claim text.