Diode and resistive memory device structures
AssigneeSpansion LLC
InventorsManuj Rathor, An Chen, Steven Avanzino, Suzette K. Pangrle
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Abstract
In an electronic device, a diode and a resistive memory device are connected in series. The diode may take a variety of forms, including oxide or silicon layers, and one of the layers of the diode may make up a layer of the resistive memory device which is in series with that diode.
Claims23
A diode comprising a first layer, and a second layer comprising an oxide in contact with the first layer.
An electronic device comprising a diode and a resistive memory device in series, the diode comprising a first layer comprising an oxide, and a second layer comprising an oxide in contact with the first layer, the resistive memory device comprising a first electrode comprising one of the layers of the diode, a switching layer, and a second electrode.
An electronic device comprising a diode and a resistive memory device in series, the diode comprising a first layer comprising silicon, and a second layer comprising silicon in contact with the first layer, the resistive memory device comprising a first electrode comprising one of the layers of the diode, a switching layer, and a second electrode.
An electronic device comprising a diode and a resistive memory device in series, the diode comprising a first layer comprising an oxide, and a second layer comprising an oxide in contact with the first layer, the resistive memory device comprising a first electrode on a layer of the diode, a switching layer, and a second electrode.
An electronic device comprising a diode and a resistive memory device in series, the diode comprising a layer comprising a region of a first conductivity type and a region of a second conductivity type opposite the first conductivity type, the resistive memory device comprising a first electrode comprising the region of the first conductivity type, a switching layer, and a second electrode.
Dependencies are inferred from the claim text.