Group-iii nitride light-emitting device and method for manufacturing group-iii nitride based semiconductor light-emitting device

A method for manufacturing a group-III nitride based semiconductor light-emitting device, the method comprising the steps of:

• preparing a group-III nitride wafer having a basal plane inclined at an inclination angle within the range of 15 degrees or more, and 45 degrees or less with reference to a {0001} plane or a {000-1} plane;
• forming a first conductive type of gallium nitride based semiconductor region on the basal plane of the group-III nitride wafer;
• forming an active layer which has a quantum well structure and which is grown on a basal plane of the first conductive type of gallium nitride based semiconductor region in such a way as to have an emission peak wavelength of 410 nm or more;
• and
• forming a second conductive type of gallium nitride based semiconductor region on the active layer,
• wherein the group-III nitride wafer is composed of InSAlTGa1-S−TN (0≦S≦1, 0≦T≦1, and 0≦S+T≦1),
• the formation of the active layer includes
• a step in which a first semiconductor layer composed of InXGa1-XN (0.15≦X<0.4, where X is a strained composition) is grown at a first temperature and
• a step in which a second semiconductor layer composed of InYGa1-YN (0≦Y≦0.05, Y<X, where Y is a strained composition) is grown at a second temperature, and
• the first temperature is lower than the second temperature, and the difference between the first temperature and the second temperature is 95 degree or more in Celsius.