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US 2009/0212273 A1Published application
Semiconductor Devices Having Resistive Memory Elements
AssigneeSamsung Electronics Co., Ltd.
InventorsJin-Shi Zhao, Jang-Eun Lee, In-Gyu Baek, Hyun-Jun Sim, Xiang-Shu Li, Eun-Kyung Yim
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Abstract
Provided is a semiconductor device including a resistive memory element. The semiconductor device includes a substrate and the resistive memory element disposed on the substrate. The resistive memory element has resistance states of a plurality of levels according to generation and dissipation of at least one platinum bridge therein.
Claims20
A semiconductor device, comprising:
- a substrate;
- and
- a resistive memory element disposed on the substrate, the resistive memory element including a plurality of resistance state levels that correspond to generation and dissipation of at least one platinum bridge therein.
A semiconductor device, comprising:
- a substrate;
- a resistive memory element disposed on the substrate, the resistive memory element including a plurality of resistance state levels that correspond to generation and dissipation of at least one platinum bridge therein;
- a first electrode that is on the substrate and connected to a first surface of the resistive memory element;
- and
- a second electrode that is on the substrate and connected to a second surface of the resistive memory element,
- wherein the platinum bridge comprises platinum particles that are injected from the first electrode into the resistive memory element responsive to application of a first initial voltage and a second initial voltage to the first electrode and the second electrode, respectively,
- wherein the platinum bridge is generated by respectively applying a first set voltage and a second set voltage to the first electrode and the second electrode,
- wherein an electric potential difference between the first set voltage and the second set voltage is less than an electric potential difference between the first initial voltage and the second initial voltage, and
- wherein a direction of an initial electric field generated by the first initial voltage and the second initial voltage is opposite to that of a set electric field generated by the first set voltage and the second set voltage.
6 more elements
Dependencies are inferred from the claim text.