Electron beam writing method, fine pattern writing system, method for manufacturing uneven pattern carrying substrate, and method for manufacturing magnetic disk medium

An electron beam writing method for writing a fine pattern for a magnetic disk medium on a substrate applied with a resist and placed on a rotation stage by scanning an electron beam on the substrate while rotating the rotation stage, the fine pattern including writing elements having a track direction length greater than an irradiation diameter of the electron beam, wherein:

• the fine pattern includes a short element corresponding to 1-bit signal length and a long element corresponding to 2-bit signal length in a mixed fashion, and the writing length of the long element is reduced by a predetermined ratio with respect to a final 2-bit signal length on the magnetic disk medium;
• the writing of the fine pattern is performed by rapidly vibrating the electron beam back and forth in a direction orthogonal to a radial direction of the substrate and X-Y deflecting the electron beam in the radial direction of the substrate and the direction orthogonal to the radial direction while rotating the substrate in one direction, thereby scan controlling the electron beam so as to completely fill the shapes of the short and long elements in sequence;
• and
• when writing the long element, the electron beam is scanned with the middle position of the 2-bit signal length as the center position thereof so as to completely fill the area of the writing length reduced by the predetermined ratio, thereby writing the long element with an unwritten portion of predetermined width remaining on each side thereof with respect to the final 2-bit signal length on the magnetic disk medium.