Scanning electron microscope and method of measuring pattern dimension using the same
AssigneeHitachi High-Technologies Corporation
InventorsWataru Nagatomo, Chie Shishido, Maki Tanaka
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AssigneeHitachi High-Technologies Corporation
InventorsWataru Nagatomo, Chie Shishido, Maki Tanaka
Estimating the term…
In dimension measurement of semiconductor pattern by CD-SEM, the error value between dimensional measurement value and actual dimension on the pattern is much variational as it is dependent on the cross-sectional shape of the pattern, and a low level of accuracy was one time a big problem. In the present invention, a plurality of patterns, each different in shape, were prepared beforehand with AFM measurement result and patterns of the same shape measured by CD-SEM. These measurement results and dimensional errors were homologized with each other and kept in a database. For actual measurement of dimensions, most like side wall shape, and corresponding CD-SEM measurement error result are called up, and the called-up error results are used to correct CD-SME results of measurement object patterns. In this manner, it becomes possible to correct or reduce dimensional error which is dependent on cross-sectional shape of the pattern.
A scanning electron microscope, comprising:
Pattern dimension measuring method, comprising the steps of:
Pattern dimension measuring method, comprising the steps of:
Dependencies are inferred from the claim text.