Plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsNaoki Matsumoto, Jun Yoshikawa, Masaru Sasaki, Kazuyuki Kato, Masafumi Shikata, Shingo Takahashi
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AssigneeTokyo Electron Limited
InventorsNaoki Matsumoto, Jun Yoshikawa, Masaru Sasaki, Kazuyuki Kato, Masafumi Shikata, Shingo Takahashi
Estimating the term…
Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24 disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25 positioned uprightly above the inclined surfaces 16a and 16b.
A plasma processing apparatus comprising:
A plasma processing apparatus comprising:
Dependencies are inferred from the claim text.