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US 2009/0211523 A1Published application
Apparatus to Control Semiconductor Film Deposition Characteristics
AssigneeApplied Materials, Inc.
InventorsSatheesh Kuppurao, David K. Carlson, Manish Hemkar, Andrew Lam, Errol Sanchez, Howard Beckford
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Abstract
Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
Claims18
A film formation system comprising:
- a chamber wall adapted to accept a substrate on which a film is to be formed;
- a first cooling system for cooling a first portion of the chamber wall;
- a first regulator for controlling cooling power of the first system;
- and
- control logic for controlling the first regulator, the control logic comprising:
- a memory for holding a first temperature parameter defining a desired temperature trajectory of the first portion of the chamber wall over a processing period;
- a user input/output system for entering the first temperature parameter;
- a first output for controlling the first regulator;
- and a processing circuit for sending first signals to the first output over the processing period according to the first temperature parameter.
6 more elements
Dependencies are inferred from the claim text.