Method of manufacturing single crystal wire
AssigneeKorea Electrotechnology Research Institute
InventorsSe Young Jeong, Chae Ryong Cho, Sang Eon Park, Sung Kyu Kim
Life of this patent
Estimating the term…
Loading patent…
AssigneeKorea Electrotechnology Research Institute
InventorsSe Young Jeong, Chae Ryong Cho, Sang Eon Park, Sung Kyu Kim
Estimating the term…
Disclosed are a single crystal wire and a manufacturing method thereof. The method comprises the steps of: placing into a growth crucible at least one metal selected from the group consisting of gold, copper, silver, aluminum and nickel; heating and melting the metal placed in the growth crucible; growing a single crystal using the metal crystal as a seed by the Czochralski or Bridgman method; cutting the grown single crystal by electric discharge machining; and forming the cut single crystal into a wire. In the method, the grown metal single crystal is formed into a disc-shaped piece by electric discharge machining. The piece is formed into a single crystal wire by wire-cut electric discharge machining, and the single crystal wire can be used as a ring, a pendant or a wire within a high-quality cable making a connection in audio and video systems. Also, the single crystal formed into the disc-shaped piece by electric discharge machining can be used as a substrate and a target for deposition.
A method for manufacturing a single crystal wire, comprising the steps of:
Dependencies are inferred from the claim text.