# US 2009/0179243 A1 · Photo detector array

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- Number: US 2009/0179243 A1
- Document ID: US20090179243A1
- Status: Published application
- Kind: A1
- Application number: 12/406,337
- Filed: 2009-03-18
- Published: 2009-07-16
- Earliest claimed: 2005-10-07
- Assignees: Integrated Digital Technologies, Inc.
- Inventors: SEN-SHYONG FANN
- Web page: https://patentgrep.com/patent/US20090179243A1

## CPC

- H10F 39/197: {Bipolar transistor image sensors}
- G06F 3/0412: {Digitisers structurally integrated in a display}
- G06F 3/042: by opto-electronic means
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)

## Abstract

A photo detector device includes a photosensitive transistor capable of detecting an optical signal including an image component and a background component and converting the optical signal into a current including an image current corresponding to the image component and a background current corresponding to the background component, a first amplifier module electrically connected to the photosensitive transistor capable of canceling the background current and amplifying the image current, and a second amplifier module electrically connected to the first amplifier module capable of detecting a direct-current (dc) portion of the image current.

## Claims

### Claim at position 1

1-20. (canceled)

### Claim 21

A photo detector device, comprising:
a substrate;
a gate electrode over the substrate;
an insulating layer over the gate electrode and the insulating layer;
a semiconductor layer over the insulating layer;
a first diffused region over the semiconductor layer;
a second diffused region over the semiconductor layer; and
a third diffused region over the semiconductor layer and the gate electrode between the first diffused region and the second diffused region,
wherein the first diffused region, the gate electrode and the third diffused region form a first photosensitive transistor capable of detecting an optical signal, and the second diffused region, the gate electrode and the third diffused region form a second photosensitive transistor capable of detecting an optical signal.

### Claim 22 (depends on 21)

The device of claim 21, wherein the gate electrode extends to cross over a portion of at least one of the first diffused region and the second diffused region.

### Claim 23 (depends on 21)

The device of claim 21, wherein the gate electrode is aligned with at least one of the first diffused region and the second diffused region.

### Claim 24 (depends on 21)

The device of claim 21, wherein the gate electrode is a first gate electrode, further comprising:
a second gate electrode over the substrate; and
a fourth diffused region over the semiconductor layer,
wherein the fourth diffused region, the second gate electrode and one of the first diffused region and the second diffused region form a switching transistor capable of driving the photosensitive transistor.