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US 2009/0170030 A1Published application
Method of making a pillar pattern using triple or quadruple exposure
AssigneeSanDisk 3D LLC
InventorsRoy E. Scheuerlein, Christopher J. Petti
Life of this patent
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Abstract
Methods of making pillar shaped device array using a triple or quadruple exposure technique are described. A plurality of pillar shaped devices are formed arranged in a hexagonal or rectangular pattern.
Claims15
A method of making a device, comprising:
- forming a photoresist layer over a substrate;
- performing a first exposure of the photoresist layer using a first mask to form first exposed regions in the photoresist layer;
- performing a second exposure of the photoresist layer using a second mask to form second exposed regions in the photoresist layer;
- performing a third exposure of the photoresist layer using a third mask to form third exposed regions in the photoresist layer, such that each adjacent first, second and third exposed regions are approximately equidistant from each other;
- patterning the photoresist layer after the first, the second and the third exposures;
- etching the substrate using the patterned photoresist layer;
- and
- forming a plurality of pillar shaped devices arranged in a substantially hexagonal pattern.
5 more elements
A method of making a device, comprising:
- forming at least one semiconductor layer over first conductor lines;
- forming a first photoresist layer over the at least one semiconductor layer;
- performing a first exposure of the first photoresist layer using a first mask to form first exposed regions in the first photoresist layer;
- performing a second exposure of the first photoresist layer using a second mask to form second exposed regions in the first photoresist layer;
- performing a third exposure of the first photoresist layer using a third mask to form third exposed regions in the first photoresist layer;
- performing a fourth exposure of the first photoresist layer using a fourth mask to form fourth exposed regions in the first photoresist layer;
- patterning the first photoresist layer after the first, the second, the third and the fourth exposures;
- etching the at least one semiconductor layer to form a plurality of pillar shaped devices;
- and
- forming a plurality of second conductor lines over the plurality of pillar shaped devices.
7 more elements
Dependencies are inferred from the claim text.