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US 2009/0169874 A1Published application
Forming electroplated inductor structures for integrated circuits
AssigneeIntel Corporation
InventorsPaul McCloskey, Donald S. Gardner, Brice Jamieson, Saibal Roy, Terence O'Donnell
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Abstract
Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a magnetic material on a substrate, wherein the magnetic material comprises rhenium, cobalt, iron and phosphorus, and annealing the magnetic material at a temperature below about 330 degrees Celsius, wherein the coercivity of the annealed magnetic material is below about 1 Oersted.
Claims20
A method comprising:
- forming a magnetic material on a substrate, wherein the magnetic material comprises rhenium, cobalt and phosphorus;
- and
- annealing the magnetic material at a temperature below about 330 degrees Celsius, wherein the coercivity of the annealed magnetic material is below about 1 Oersted.
A method comprising:
- forming a magnetic material comprising rhenium, phosphorus and cobalt on a substrate, wherein the magnetic material comprises a portion of an inductor structure, and wherein the magnetic material comprises a coercivity below about 1 Oersted;
- and
- annealing the magnetic material at a temperature below about 330 degrees Celsius, wherein the coercivity of the annealed magnetic material remains below about 1 Oersted.
A structure comprising:
- a magnetic material comprising rhenium, phosphorus and cobalt on a substrate, wherein the atomic percentage of phosphorus comprises about 8 to about 25 percent and the atomic percentage of rhenium comprises about 0.1 to about 5 percent, and wherein the magnetic material comprises a coercivity below about 1 Oersted;
- and
- wherein the magnetic material comprises a portion of an inductor structure.
Dependencies are inferred from the claim text.