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AssigneesHeraeus Quarzglas GmbH & Co. KG, Shin-Etsu Quartz Products Co., Ltd.
InventorsJuergen Weber, Tatsuhiro Sato, Ralf Schneider, Achim Hofmann, Christian Gebauer
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The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiO2 and dopant). Starting from this, to provide a quartz glass component for use in semiconductor manufacture in an environment with etching action, which component is distinguished by both high purity and high resistance to dry etching and avoids known drawbacks caused by co-doping with aluminum oxide, it is suggested according to the invention that the first dopant should be nitrogen and that the mean content of metastable hydroxyl groups of the quartz glass is less than 30 wtppm.
A component for use in semiconductor manufacture, said component comprising quartz glass, said quartz glass having a near-surface region having a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each based on the total mass of SiO2 and said first and second dopants, wherein the first dopant is nitrogen and the quartz glass has a mean content of metastable hydroxyl groups of less than 30 wtppm.
Dependencies are inferred from the claim text.