Semiconductor device fabrication method and fabrication apparatus using a stencil mask

A semiconductor device fabrication apparatus comprising:

• a particle direction collimation unit collimating incident direction of particles, and selectively irradiating the particles to a substrate having a first circuit pattern of a semiconductor device using a mask with at least part of second circuit pattern of the semiconductor device;
• and
• an angle adjustment unit changing at least one of a substrate angle between a vertical axis of the substrate and the incident direction of the particles and a mask angle between the vertical axis of the mask and the incident direction so that the second circuit pattern on the mask can be aligned to the first circuit pattern on the substrate with a design margin.

A semiconductor device fabrication apparatus comprising:

• a particle direction collimating unit collimating incident direction of particles, and selectively irradiating the particles to a substrate having a first circuit pattern of a semiconductor device, an on-substrate first mark, and an on-substrate second mark using a mask with at least part of second circuit pattern of the semiconductor device, an on-mask first mark, and an on-mask second mark;
• and
• an angle adjustment unit changing at least one of the substrate angle between the vertical axis of the substrate and the incident direction of the particles and the mask angle between the vertical axis of the mask and the incident direction so that the on-mask first mark can be aligned to the on-substrate first mark with a design margin and that the on-mask second mark can be aligned to the on-substrate second mark when viewed along the incident direction with a design margin.