US 2009/0158123 A1 · ERROR CORRECTION SCHEME FOR NON-VOLATILE MEMORY

Abstract

Error correcting systems, methods, and devices for non-volatile memory are disclosed. In one embodiment, a non-volatile memory device comprises a data area for storing data, an error correcting code generation section for generating an error correcting code in response to receipt of a code generation command, and an error correcting code area for storing the error correcting code. The non-volatile memory device further comprises a detector circuit for detecting the generating of the error correcting code, and a read section for correcting the data stored in the data area based on the error correcting code upon the detecting of the generation of the error correcting code by the detector circuit, where the code generation command is forwarded by a memory controller when the data are is filled with the data beyond a threshold level

Claims20

Dependent claims

A non-volatile memory device, comprising:

a data area for storing data;
an error correcting code (ECC) generation section for generating an error correcting code in response to receipt of a code generation command;
an error correcting code area for storing the error correcting code;
a detector circuit for detecting the generating of the error correcting code;
and
a read section for repairing the data stored in the data area based on the error correcting code upon the detecting of the generating of the error correcting code by the detector circuit,
wherein the code generation command is forwarded by a memory controller when the data are is filled with the data beyond a threshold level.

4 more elements

Dependencies are inferred from the claim text.

Error correction scheme for non-volatile memory

Life of this patent

Error correction scheme for non-volatile memory

Life of this patent

Abstract

Claims20