Distributing Metadata Across Multiple Different Disruption Regions Within an Asymmetric Memory System

A method of writing application data to a memory storage system that includes an asymmetric memory component having multiple disruption regions such that metadata related to a write operation performed to write application data to an individual disruption region of the asymmetric memory component is written to the same individual disruption region of the asymmetric memory component as the application data, where individual disruption regions of the asymmetric memory component include one or more physical blocks, and where individual disruption regions of the asymmetric memory component are configured such that writing to a physical block within a disruption region of the asymmetric memory component affects the availability of other physical blocks within the same disruption region of the asymmetric memory component, the method comprising:

• processing an instruction to write a first quantum of application data to the asymmetric memory component;
• in response to processing the instruction to write the first quantum of application data to the asymmetric memory component, performing a first write operation that includes:
• generating metadata related to the first write operation, and
• writing the first quantum of application data and the metadata related to the first write operation to different physical blocks within a first disruption region of the asymmetric memory component such that the first quantum of application data and the metadata related to the first write operation both are written to the same disruption region of the asymmetric memory component;
• processing an instruction to write a second quantum of application data to the asymmetric memory component;
• in response to processing the instruction to write the second quantum of application data to the asymmetric memory component, performing a second write operation that includes:
• generating metadata related to the second write operation, and
• writing the second quantum of application data and the metadata related to the second write operation to different physical blocks within a second disruption region of the asymmetric memory component that is different from the first disruption region of the asymmetric memory component, such that the second quantum of application data and the metadata related to the second write operation both are written to the same disruption region of the asymmetric memory component.

A memory storage system for storing data for an electronic device, the memory storage system comprising:

• a first disruption region of asymmetric memory that includes:
• a first set of physical data blocks for storing application data,
• a first physical metadata block that is reserved for storing metadata that is related to application data stored in the first set of physical data blocks within the first disruption region of asymmetric memory, and
• a second physical metadata block that is reserved for storing a redundant copy of the metadata that is related to the application data stored in the first set of physical data blocks within the first disruption region of asymmetric memory, wherein the first disruption region of asymmetric memory is configured to enable write operations to individual physical data blocks within the first disruption region of asymmetric memory in which writing to an individual physical data block within the first disruption region of asymmetric memory affects the availability of other physical blocks within the first disruption region of asymmetric memory;
• and
• a second disruption region of asymmetric memory that includes:
• a second set of physical data blocks for storing application data,
• a third physical metadata block that is reserved for storing metadata that is related to application data stored in the second set of physical data blocks within the second disruption region of asymmetric memory, and
• a fourth physical metadata block that is reserved for storing a redundant copy of the metadata that is related to the application data stored in the second set of physical data blocks within the second disruption region of asymmetric memory, wherein the second disruption region of asymmetric memory is configured to enable write operations to individual physical data blocks within the second disruption region of asymmetric memory in which writing to an individual physical data block within the second disruption region of asymmetric memory affects the availability of other physical blocks within the second disruption region of asymmetric memory.