Method and apparatus for modeling source-drain current of thin film transistor

An apparatus for modeling source-drain current of a TFT, comprising:

• a sample-data input unit for receiving sample data, the sample data including a sample input value and a sample output value;
• a variable adjusting unit for adjusting modeling variables according to the sample data;
• a model calculating unit for calculating a current model value according to the adjusted modeling variables;
• an error calculating unit for calculating a difference between the calculated current model value and the sample output value;
• an error determining unit for determining whether the difference is smaller than a predetermined threshold value, and establishing the adjusted modeling variables when the difference is smaller than the predetermined threshold value;
• a model applying unit for applying the modeling variables established by the error determining unit to the current model;
• and
• a result-value output unit for applying actual input data to the current model and outputting a result value corresponding to the actual input data,
• wherein the current model is a model for predicting the source-drain current of the TFT.